Tutorial 5 tasks and submission
- Due 20 Feb by 23:59
- Points 4
- Submitting a file upload
- File types pdf
- Available 14 Feb at 15:00 - 31 Mar at 23:59
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1. Use the basic MOSFET IV model to plot the drain current vs. gate-source voltage, using the given equation and under the following conditions:The drain voltage is 50 mV, the threshold voltage is 0.3 V, the bulk-charge factor is 1.3, the oxide (SiO2) thickness is 2 nm, the gate length is equal to the gate width,
L = W = 10 µm. The electron surface mobility is 100 cm2/Vs.
Use a plotting software to generate the IV data for a range of Vgs above Vt.
Extra: What IV model should be used if the drain voltage is 1 V? Plot this data in the same graph.
2. Determine the channel mobility of a MOS-transistor that has the IV-characteristics, shown in the figure below. The CV-data are also needed. Assume that Vds = 50 mV.
3. What is the surface mobility at VGS = 1 V in an N-channel MOSFET with Vt = 0.3 V and Tox = 2 nm. Use both Figure data and formulas (the field needs to be in units of MV/cm) from the book. Do the answers agree?
4. Draw the voltage transfer curve (VTC) of a CMOS inverter with matched NMOS and PMOS devices (symmetric drive current). What happens if the NMOS and PMOS are not matched, consider the case where the NMOS threshold voltage is slightly higher (absolute value) compared to the PMOS. HINT use LTspice software or some other tool of your choice!
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