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IL2240/IL224V VT25
First version of lab report for peer review
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2025 VT
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First version of lab report for peer review

  • Due 19 Feb by 23:59
  • Points 1
  • Submitting a file upload
  • File types pdf
  • Available 22 Jan at 10:00 - 31 Mar at 23:59
This assignment was locked 31 Mar at 23:59.

Supporting IV-sweep COMSOL model (updated with light induced EHP generation)frontpanel-1.zip Download frontpanel-1.zip

Supporting CV-sweep COMSOL model Download COMSOL model

2025 version of the lab instruction Download 2025 version of the lab instruction

Summary of task, see PDF for full details

List of Tasks

Task 1 IV- and CV-sweeps on the Si-wafer under various conditions

 

  • Set the switches to SMU mode and assign the correct channels, the instructor will guide you.
  • Perform an IV-sweep under forward bias condition, using suitable voltage steps and a range from 0 to a typical positive value for a Si-diode.
  • Perform an IV-sweep under reverse bias condition, using suitable voltage steps and a range from 0 to a negative value.
  • Repeat both IV-sweeps in dark and light conditions
  • Repeat both IV-sweeps for room temperature and an elevated temperature around 40 °C.
  • Set the switches to CV mode and assign the correct channels, the instructor will guide you.
  • Perform a CV-sweep under reverse bias condition, using a suitable voltage step and a range from 0 to a negative value. Before the CV-measurement estimate the maximum feasible reverse voltage by an IV measurement or ask the instructor.

 

Task 2 IV- and CV-sweeps on the SiC-wafer piece under various conditions

 

At fixed temperature (RT 25 °C)

 

  • Set the switches to SMU mode and assign the correct channels, the instructor will guide you.
  • Perform an IV-sweep under forward bias condition, using a suitable voltage step and a range from 0 to a typical positive value for a SiC-diode (higher than the Si-case).
  • Perform an IV-sweep under reverse bias condition, using a suitable voltage step and a range from 0 to a negative value (same as the Si-case).
  • Repeat both sweeps in dark and light conditions

 

At an elevated temperature (around 125 °C)

 

  • Set the switches to CV mode and assign the correct channels, the instructor will guide you.
  • Perform a CV-sweep under reverse bias condition, using a suitable voltage step and a range from 0 to a negative value. Before the CV-measurement, estimate the maximum feasible reverse voltage by an IV measurement or ask the instructor.
  • Extra, investigate the influence of the CV AC test-signal frequency, default value 1 MHz.
  • Cool the sample back to RT.

 

 

 

 

Data analysis task performed by each group after the lab

 

At the end of the exercise, each lab group receives measurement data transferred by email/online. These data should then be fitted by suitable models and the model parameters should be extracted.

Use data from the Si- and SiC-diodes to fit model parameters to determine the parameters in the Table 1:

Table 1. Parameters to be determined by fitting of experimental data

Parameter

Symbol

vs. T

vs. light

Reverse saturation current

Io

yes

yes

Ideality factor

n

yes

yes

Series resistance

Rs

yes if possible

NA

Low side doping

NA or ND

NA

NA

 

 

To complete this task you need to perform forward and reverse IV-sweeps with a suitable applied voltage range and enough steps (small voltage step). And also CV-sweeps below the breakdown voltage.

 

 

 

1740005999 02/19/2025 11:59pm
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Total points: 5 out of 5